The effective activation energy U-e(T,H) in epitaxial GdBa2Cu3O7-delta thin films

	The effective activation energy U-e(T,H) in epitaxial GdBa2Cu3O7-delta thin films
	Wang, ZH ; Cao, XW
刊名	SOLID STATE COMMUNICATIONS
	1999
卷号	109 期号:11 页码:709-714
关键词	HIGH-TEMPERATURE SUPERCONDUCTORS CRITICAL CURRENT-DENSITY MAGNETIC-FIELD FLUX MOTION RESISTIVE TRANSITION THERMODYNAMIC FLUCTUATIONS OXIDE SUPERCONDUCTORS TRANSPORT-PROPERTIES YBA2CU3O7-DELTA ANISOTROPY
ISSN号	0038-1098
通讯作者	Wang, ZH, Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China
学科主题	Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/99155]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Wang, ZH,Cao, XW. The effective activation energy U-e(T,H) in epitaxial GdBa2Cu3O7-delta thin films[J]. SOLID STATE COMMUNICATIONS,1999,109(11):709-714.
APA	Wang, ZH,&Cao, XW.(1999).The effective activation energy U-e(T,H) in epitaxial GdBa2Cu3O7-delta thin films.SOLID STATE COMMUNICATIONS,109(11),709-714.
MLA	Wang, ZH,et al."The effective activation energy U-e(T,H) in epitaxial GdBa2Cu3O7-delta thin films".SOLID STATE COMMUNICATIONS 109.11(1999):709-714.