Short-wavelength photoluminescence from silicon and nitrogen coimplanted SiO2 films

	Short-wavelength photoluminescence from silicon and nitrogen coimplanted SiO2 films
	Zhao, J ; Mao, DS ; Lin, ZX ; Ding, XZ ; Jiang, BY ; Yu, YH ; Liu, XH ; Yang, GQ
刊名	APPLIED PHYSICS LETTERS
	1999
卷号	74 期号:10 页码:1403-1405
关键词	VISIBLE PHOTOLUMINESCENCE ROOM-TEMPERATURE ION-IMPLANTATION LUMINESCENCE LAYERS GLASS
ISSN号	0003-6951
通讯作者	Zhao, J, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/99122]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Zhao, J,Mao, DS,Lin, ZX,et al. Short-wavelength photoluminescence from silicon and nitrogen coimplanted SiO2 films[J]. APPLIED PHYSICS LETTERS,1999,74(10):1403-1405.
APA	Zhao, J.,Mao, DS.,Lin, ZX.,Ding, XZ.,Jiang, BY.,...&Yang, GQ.(1999).Short-wavelength photoluminescence from silicon and nitrogen coimplanted SiO2 films.APPLIED PHYSICS LETTERS,74(10),1403-1405.
MLA	Zhao, J,et al."Short-wavelength photoluminescence from silicon and nitrogen coimplanted SiO2 films".APPLIED PHYSICS LETTERS 74.10(1999):1403-1405.