Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions | |
Zhao, J ; Mao, DS ; Lin, ZX ; Jiang, BY ; Yu, YH ; Liu, XH ; Wang, HZ ; Yang, GQ | |
刊名 | APPLIED PHYSICS LETTERS
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1998 | |
卷号 | 73期号:13页码:1838-1840 |
关键词 | POROUS SILICON-CARBIDE VISIBLE PHOTOLUMINESCENCE LUMINESCENCE NANOCRYSTALS GE SIO2-FILMS PARTICLES |
ISSN号 | 0003-6951 |
通讯作者 | Zhao, J, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China |
学科主题 | Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/98979] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | Zhao, J,Mao, DS,Lin, ZX,et al. Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions[J]. APPLIED PHYSICS LETTERS,1998,73(13):1838-1840. |
APA | Zhao, J.,Mao, DS.,Lin, ZX.,Jiang, BY.,Yu, YH.,...&Yang, GQ.(1998).Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions.APPLIED PHYSICS LETTERS,73(13),1838-1840. |
MLA | Zhao, J,et al."Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions".APPLIED PHYSICS LETTERS 73.13(1998):1838-1840. |
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