Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions

	Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions
	Zhao, J ; Mao, DS ; Lin, ZX ; Jiang, BY ; Yu, YH ; Liu, XH ; Wang, HZ ; Yang, GQ
刊名	APPLIED PHYSICS LETTERS
	1998
卷号	73 期号:13 页码:1838-1840
关键词	POROUS SILICON-CARBIDE VISIBLE PHOTOLUMINESCENCE LUMINESCENCE NANOCRYSTALS GE SIO2-FILMS PARTICLES
ISSN号	0003-6951
通讯作者	Zhao, J, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98979]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Zhao, J,Mao, DS,Lin, ZX,et al. Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions[J]. APPLIED PHYSICS LETTERS,1998,73(13):1838-1840.
APA	Zhao, J.,Mao, DS.,Lin, ZX.,Jiang, BY.,Yu, YH.,...&Yang, GQ.(1998).Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions.APPLIED PHYSICS LETTERS,73(13),1838-1840.
MLA	Zhao, J,et al."Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions".APPLIED PHYSICS LETTERS 73.13(1998):1838-1840.