Electronic states of In3Sb2, In2Sb3, and their positive ions

	Electronic states of In3Sb2, In2Sb3, and their positive ions
	Feng, PY ; Balasubramanian, K
刊名	JOURNAL OF PHYSICAL CHEMISTRY A
	1998
卷号	102 期号:45 页码:9047-9055
关键词	GALLIUM-ARSENIDE CLUSTERS KINETIC-ENERGY SPECTROSCOPY SMALL GAAS CLUSTERS INDIUM-PHOSPHIDE CURVES PHOTODETACHMENT POTENTIALS CONSTANTS SURFACES TRIMERS
ISSN号	1089-5639
通讯作者	Balasubramanian, K, Arizona State Univ, Dept Biochem & Chem, Tempe, AZ 85287 USA
学科主题	Chemistry, Physical; Physics, Atomic, Molecular & Chemical
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98945]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Feng, PY,Balasubramanian, K. Electronic states of In3Sb2, In2Sb3, and their positive ions[J]. JOURNAL OF PHYSICAL CHEMISTRY A,1998,102(45):9047-9055.
APA	Feng, PY,&Balasubramanian, K.(1998).Electronic states of In3Sb2, In2Sb3, and their positive ions.JOURNAL OF PHYSICAL CHEMISTRY A,102(45),9047-9055.
MLA	Feng, PY,et al."Electronic states of In3Sb2, In2Sb3, and their positive ions".JOURNAL OF PHYSICAL CHEMISTRY A 102.45(1998):9047-9055.