Relation between electroluminescence and photoluminescence of Si+-implanted SiO2

	Relation between electroluminescence and photoluminescence of Si+-implanted SiO2
	Song, HZ ; Bao, XM ; Li, NS ; Zhang, JY
刊名	JOURNAL OF APPLIED PHYSICS
	1997
卷号	82 期号:8 页码:4028-4032
关键词	POROUS SILICON VISIBLE PHOTOLUMINESCENCE ROOM-TEMPERATURE CRYSTALLINE SI LUMINESCENCE SIO2-FILMS GLASS DEFECTS WAFERS FILMS
ISSN号	0021-8979
通讯作者	Song, HZ, NANJING UNIV,NATL LAB SOLID STATE MICROSTRUCT,NANJING 210093,PEOPLES R CHINA
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98791]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Song, HZ,Bao, XM,Li, NS,et al. Relation between electroluminescence and photoluminescence of Si+-implanted SiO2[J]. JOURNAL OF APPLIED PHYSICS,1997,82(8):4028-4032.
APA	Song, HZ,Bao, XM,Li, NS,&Zhang, JY.(1997).Relation between electroluminescence and photoluminescence of Si+-implanted SiO2.JOURNAL OF APPLIED PHYSICS,82(8),4028-4032.
MLA	Song, HZ,et al."Relation between electroluminescence and photoluminescence of Si+-implanted SiO2".JOURNAL OF APPLIED PHYSICS 82.8(1997):4028-4032.