EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM | |
LIU, P ; LI, BZ ; SUN, Z ; GU, ZG ; HUANG, WN ; ZHOU, ZY ; NI, RS ; LIN, CL ; Zou, SC(邹世昌) ; HONG, F ; ROZGONYI, GA | |
刊名 | JOURNAL OF APPLIED PHYSICS
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1993 | |
卷号 | 74期号:3页码:1700-1706 |
关键词 | IMPLANTATION SILICIDES SILICON LAYERS FILMS |
ISSN号 | 0021-8979 |
通讯作者 | LIU, P, FUDAN UNIV,DEPT ELECTRON ENGN,SHANGHAI 200433,PEOPLES R CHINA |
学科主题 | Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/98471] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | LIU, P,LI, BZ,SUN, Z,et al. EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM[J]. JOURNAL OF APPLIED PHYSICS,1993,74(3):1700-1706. |
APA | LIU, P.,LI, BZ.,SUN, Z.,GU, ZG.,HUANG, WN.,...&ROZGONYI, GA.(1993).EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM.JOURNAL OF APPLIED PHYSICS,74(3),1700-1706. |
MLA | LIU, P,et al."EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM".JOURNAL OF APPLIED PHYSICS 74.3(1993):1700-1706. |
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