EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM

	EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM
	LIU, P ; LI, BZ ; SUN, Z ; GU, ZG ; HUANG, WN ; ZHOU, ZY ; NI, RS ; LIN, CL ; Zou, SC(邹世昌） ; HONG, F ; ROZGONYI, GA
刊名	JOURNAL OF APPLIED PHYSICS
	1993
卷号	74 期号:3 页码:1700-1706
关键词	IMPLANTATION SILICIDES SILICON LAYERS FILMS
ISSN号	0021-8979
通讯作者	LIU, P, FUDAN UNIV,DEPT ELECTRON ENGN,SHANGHAI 200433,PEOPLES R CHINA
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98471]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	LIU, P,LI, BZ,SUN, Z,et al. EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM[J]. JOURNAL OF APPLIED PHYSICS,1993,74(3):1700-1706.
APA	LIU, P.,LI, BZ.,SUN, Z.,GU, ZG.,HUANG, WN.,...&ROZGONYI, GA.(1993).EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM.JOURNAL OF APPLIED PHYSICS,74(3),1700-1706.
MLA	LIU, P,et al."EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM".JOURNAL OF APPLIED PHYSICS 74.3(1993):1700-1706.