Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling | |
Gong, YF ; Song, ZT ; Ling, Y ; Liu, Y ; Feng, SL | |
刊名 | CHINESE PHYSICS LETTERS
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2009 | |
卷号 | 26期号:11页码:118101-118101 |
关键词 | LOW RESET CURRENT DEVICE |
ISSN号 | 0256-307X |
通讯作者 | Gong, YF, Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
学科主题 | Physics, Multidisciplinary |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/94890] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Gong, YF,Song, ZT,Ling, Y,et al. Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling[J]. CHINESE PHYSICS LETTERS,2009,26(11):118101-118101. |
APA | Gong, YF,Song, ZT,Ling, Y,Liu, Y,&Feng, SL.(2009).Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling.CHINESE PHYSICS LETTERS,26(11),118101-118101. |
MLA | Gong, YF,et al."Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling".CHINESE PHYSICS LETTERS 26.11(2009):118101-118101. |
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