Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination

	Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination
	Zhang, YG(张永刚） ; Gu, Y ; Tian, ZB ; Li, AZ ; Zhu, XR ; Wang, K
刊名	INFRARED PHYSICS & TECHNOLOGY
	2009
卷号	52 期号:1 页码:52-56
关键词	VAPOR-PHASE EPITAXY DARK CURRENT INGAAS PHOTODETECTORS INFRARED DETECTORS PHOTODIODES EFFICIENCY BUFFER MOCVD
ISSN号	1350-4495
通讯作者	Zhang, YG, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Instruments & Instrumentation; Optics; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94869]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, YG,Gu, Y,Tian, ZB,et al. Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination[J]. INFRARED PHYSICS & TECHNOLOGY,2009,52(1):52-56.
APA	Zhang, YG,Gu, Y,Tian, ZB,Li, AZ,Zhu, XR,&Wang, K.(2009).Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination.INFRARED PHYSICS & TECHNOLOGY,52(1),52-56.
MLA	Zhang, YG,et al."Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination".INFRARED PHYSICS & TECHNOLOGY 52.1(2009):52-56.