Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

	Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding
	Chen, T ; Hong, T ; Pan, JQ ; Chen, WX ; Cheng, YB ; Wang, Y ; Ma, XB ; Liu, WL ; Zhao, LJ ; Ran, GZ ; Wang, W ; Qin, GG
刊名	CHINESE PHYSICS LETTERS
	2009
卷号	26 期号:6 页码:64211-64211
关键词	CHEMICAL VAPOR-DEPOSITION WAVE-GUIDE CIRCUIT DOUBLE HETEROSTRUCTURES SILICON SUBSTRATE CW OPERATION WAFER DEVICES FILMS
ISSN号	0256-307X
通讯作者	Chen, T, Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94852]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Chen, T,Hong, T,Pan, JQ,et al. Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding[J]. CHINESE PHYSICS LETTERS,2009,26(6):64211-64211.
APA	Chen, T.,Hong, T.,Pan, JQ.,Chen, WX.,Cheng, YB.,...&Qin, GG.(2009).Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding.CHINESE PHYSICS LETTERS,26(6),64211-64211.
MLA	Chen, T,et al."Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding".CHINESE PHYSICS LETTERS 26.6(2009):64211-64211.