Gettering layer for oxygen accumulation in the initial stage of SIMOX processing | |
Ou, X ; Kogler, R ; Skorupa, W ; Moller, W ; Wang, X ; Gerlach, JW | |
刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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2009 | |
卷号 | 267期号:8-9页码:1273-1276 |
关键词 | LOW-DOSE SEPARATION ON-INSULATOR MATERIAL BURIED OXIDE IMPLANTED SILICON ENERGY REGION WAFERS |
ISSN号 | 0168-583X |
通讯作者 | Ou, X, Forschungszentrum Dresden Rossendorf, FWIM, PF 510119, D-01314 Dresden, Germany |
学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/94813] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Ou, X,Kogler, R,Skorupa, W,et al. Gettering layer for oxygen accumulation in the initial stage of SIMOX processing[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2009,267(8-9):1273-1276. |
APA | Ou, X,Kogler, R,Skorupa, W,Moller, W,Wang, X,&Gerlach, JW.(2009).Gettering layer for oxygen accumulation in the initial stage of SIMOX processing.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,267(8-9),1273-1276. |
MLA | Ou, X,et al."Gettering layer for oxygen accumulation in the initial stage of SIMOX processing".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 267.8-9(2009):1273-1276. |
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