A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

	A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications
	Geng, F ; Ding, XY ; Xu, GW ; Luo, L
刊名	JOURNAL OF MICROMECHANICS AND MICROENGINEERING
	2009
卷号	19 期号:10 页码:105011-105011
关键词	HIGH-DENSITY INTERCONNECT BCB
ISSN号	0960-1317
通讯作者	Geng, F, Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
学科主题	Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Instruments & Instrumentation; Materials Science, Multidisciplinary; Mechanics
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94772]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Geng, F,Ding, XY,Xu, GW,et al. A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications[J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING,2009,19(10):105011-105011.
APA	Geng, F,Ding, XY,Xu, GW,&Luo, L.(2009).A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications.JOURNAL OF MICROMECHANICS AND MICROENGINEERING,19(10),105011-105011.
MLA	Geng, F,et al."A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications".JOURNAL OF MICROMECHANICS AND MICROENGINEERING 19.10(2009):105011-105011.