Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

	Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
	Cao,X ; Li,XM ; Gao,XD ; Yu,WD ; Liu,XJ ; Zhang,YW ; Chen,LD ; Cheng,XH
刊名	JOURNAL OF APPLIED PHYSICS
	2009
卷号	106 期号:7 页码:73723-73723
关键词	NONVOLATILE MEMORY RESISTANCE TRANSITION SRTIO3
ISSN号	0021-8979
通讯作者	Cao, X, Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
学科主题	Physics ; Applied
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94757]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cao,X,Li,XM,Gao,XD,et al. Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications[J]. JOURNAL OF APPLIED PHYSICS,2009,106(7):73723-73723.
APA	Cao,X.,Li,XM.,Gao,XD.,Yu,WD.,Liu,XJ.,...&Cheng,XH.(2009).Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications.JOURNAL OF APPLIED PHYSICS,106(7),73723-73723.
MLA	Cao,X,et al."Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications".JOURNAL OF APPLIED PHYSICS 106.7(2009):73723-73723.