Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film

	Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film
	Liu, Y ; Song, ZT ; Ling, Y ; Feng, SL
刊名	CHINESE PHYSICS LETTERS
	2010
卷号	27 期号:3 页码:38502-38502
关键词	GE2SB2TE5
ISSN号	0256-307X
通讯作者	Liu, Y, Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94710]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Liu, Y,Song, ZT,Ling, Y,et al. Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film[J]. CHINESE PHYSICS LETTERS,2010,27(3):38502-38502.
APA	Liu, Y,Song, ZT,Ling, Y,&Feng, SL.(2010).Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film.CHINESE PHYSICS LETTERS,27(3),38502-38502.
MLA	Liu, Y,et al."Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film".CHINESE PHYSICS LETTERS 27.3(2010):38502-38502.