Basic Wet-Etching Solutions for Ge2Sb2Te5 Phase Change Material

	Basic Wet-Etching Solutions for Ge2Sb2Te5 Phase Change Material
	Wang, LY ; Liu, B ; Song, ZT ; Feng, SL ; Xiang, YH ; Zhang, FX
刊名	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
	2010
卷号	157 期号:4 页码:H470-H473
关键词	CHANGE MEMORY CELLS FILMS
ISSN号	0013-4651
通讯作者	Wang, LY, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China
学科主题	Electrochemistry; Materials Science, Coatings & Films
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94707]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang, LY,Liu, B,Song, ZT,et al. Basic Wet-Etching Solutions for Ge2Sb2Te5 Phase Change Material[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2010,157(4):H470-H473.
APA	Wang, LY,Liu, B,Song, ZT,Feng, SL,Xiang, YH,&Zhang, FX.(2010).Basic Wet-Etching Solutions for Ge2Sb2Te5 Phase Change Material.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,157(4),H470-H473.
MLA	Wang, LY,et al."Basic Wet-Etching Solutions for Ge2Sb2Te5 Phase Change Material".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157.4(2010):H470-H473.