Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

	Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling
	Gong, YF ; Song, ZT ; Ling, Y ; Liu, Y ; Li, YJ
刊名	CHINESE PHYSICS LETTERS
	2010
卷号	27 期号:6 页码:68501-68501
关键词	LOW RESET CURRENT
ISSN号	0256-307X
通讯作者	Gong, YF, Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94631]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Gong, YF,Song, ZT,Ling, Y,et al. Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling[J]. CHINESE PHYSICS LETTERS,2010,27(6):68501-68501.
APA	Gong, YF,Song, ZT,Ling, Y,Liu, Y,&Li, YJ.(2010).Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling.CHINESE PHYSICS LETTERS,27(6),68501-68501.
MLA	Gong, YF,et al."Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling".CHINESE PHYSICS LETTERS 27.6(2010):68501-68501.