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	Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3as the Oxidizers
	Liu, Chang; Wu, Hao; Wan, Jiaxian; Wang, Xiao; Zhang, Guozhen; Zheng, Meijuan
刊名	Nanoscale Research Letters
	2017
卷号	12期号:1
ISSN号	1931-7573
DOI	10.1186/s11671-017-2024-x
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3756520
专题	武汉大学
推荐引用方式 GB/T 7714	Liu, Chang,Wu, Hao,Wan, Jiaxian,et al. Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3as the Oxidizers[J]. Nanoscale Research Letters,2017,12(1).
APA	Liu, Chang,Wu, Hao,Wan, Jiaxian,Wang, Xiao,Zhang, Guozhen,&Zheng, Meijuan.(2017).Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3as the Oxidizers.Nanoscale Research Letters,12(1).
MLA	Liu, Chang,et al."Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3as the Oxidizers".Nanoscale Research Letters 12.1(2017).

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