Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3as the Oxidizers | |
Liu, Chang; Wu, Hao; Wan, Jiaxian; Wang, Xiao; Zhang, Guozhen; Zheng, Meijuan | |
刊名 | Nanoscale Research Letters
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2017 | |
卷号 | 12期号:1 |
ISSN号 | 1931-7573 |
DOI | 10.1186/s11671-017-2024-x |
URL标识 | 查看原文 |
收录类别 | EI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3756520 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Liu, Chang,Wu, Hao,Wan, Jiaxian,et al. Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3as the Oxidizers[J]. Nanoscale Research Letters,2017,12(1). |
APA | Liu, Chang,Wu, Hao,Wan, Jiaxian,Wang, Xiao,Zhang, Guozhen,&Zheng, Meijuan.(2017).Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3as the Oxidizers.Nanoscale Research Letters,12(1). |
MLA | Liu, Chang,et al."Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3as the Oxidizers".Nanoscale Research Letters 12.1(2017). |
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