Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam | |
Li, X.F.; Liu, C.; Chen, Z.Q.; Zhang, H.J.; Kawasuso, A. | |
刊名 | Journal of Applied Physics
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2015 | |
卷号 | 117期号:8 |
ISSN号 | 0021-8979 |
DOI | 10.1063/1.4913523 |
URL标识 | 查看原文 |
收录类别 | EI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3755815 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Li, X.F.,Liu, C.,Chen, Z.Q.,et al. Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam[J]. Journal of Applied Physics,2015,117(8). |
APA | Li, X.F.,Liu, C.,Chen, Z.Q.,Zhang, H.J.,&Kawasuso, A..(2015).Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam.Journal of Applied Physics,117(8). |
MLA | Li, X.F.,et al."Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam".Journal of Applied Physics 117.8(2015). |
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