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	Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam
	Li, X.F.; Liu, C.; Chen, Z.Q.; Zhang, H.J.; Kawasuso, A.
刊名	Journal of Applied Physics
	2015
卷号	117期号:8
ISSN号	0021-8979
DOI	10.1063/1.4913523
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3755815
专题	武汉大学
推荐引用方式 GB/T 7714	Li, X.F.,Liu, C.,Chen, Z.Q.,et al. Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam[J]. Journal of Applied Physics,2015,117(8).
APA	Li, X.F.,Liu, C.,Chen, Z.Q.,Zhang, H.J.,&Kawasuso, A..(2015).Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam.Journal of Applied Physics,117(8).
MLA	Li, X.F.,et al."Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam".Journal of Applied Physics 117.8(2015).

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