QQ客服 官方微博 反馈留言

	Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs
	Wang, Jingli; Zou, Xuming; Zhang, Kai; Guo, Yaxiong; Li, Yi; Liao, Lei; Liu, Chuansheng; Fang, Guojia; Jiang, Changzhong; Chen, Tangsheng
刊名	IEEE Transactions on Electron Devices
	2017
卷号	64期号:8
ISSN号	0018-9383
DOI	10.1109/TED.2017.2712782
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3753936
专题	武汉大学
推荐引用方式 GB/T 7714	Wang, Jingli,Zou, Xuming,Zhang, Kai,et al. Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs[J]. IEEE Transactions on Electron Devices,2017,64(8).
APA	Wang, Jingli.,Zou, Xuming.,Zhang, Kai.,Guo, Yaxiong.,Li, Yi.,...&Kong, Yuechan.(2017).Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs.IEEE Transactions on Electron Devices,64(8).
MLA	Wang, Jingli,et al."Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs".IEEE Transactions on Electron Devices 64.8(2017).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。