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	Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors
	Liao, Lei; Chen, Shanshan; He, Lin; Wu, Wen-Wei; Jiang, Changzhong; Yao, Qian; Liu, Yunqi; Wu, Bin; Wang, Jingli; Ho, Johnny C.
刊名	ADVANCED MATERIALS
	2016
卷号	28期号:10
ISSN号	0935-9648
DOI	10.1002/adma.201505205
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3736883
专题	武汉大学
推荐引用方式 GB/T 7714	Liao, Lei,Chen, Shanshan,He, Lin,et al. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors[J]. ADVANCED MATERIALS,2016,28(10).
APA	Liao, Lei.,Chen, Shanshan.,He, Lin.,Wu, Wen-Wei.,Jiang, Changzhong.,...&Yin, Long-Jing.(2016).Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.ADVANCED MATERIALS,28(10).
MLA	Liao, Lei,et al."Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors".ADVANCED MATERIALS 28.10(2016).

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