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	Deep ultraviolet and near infrared photodiode based on n-ZnO/p -silicon nanowire heterojunction fabricated at low temperature
	Yang, Xiaoxia; Wang, Chong; Zhou, Conghua; Fang, Guojia; Zhou, Hai; Yuan, Longyan; Zhao, Xingzhong; Huang, Huihui
刊名	Applied Physics Letters
	2009
卷号	94期号:1
ISSN号	0003-6951
DOI	10.1063/1.3064161
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3734108
专题	武汉大学
推荐引用方式 GB/T 7714	Yang, Xiaoxia,Wang, Chong,Zhou, Conghua,et al. Deep ultraviolet and near infrared photodiode based on n-ZnO/p -silicon nanowire heterojunction fabricated at low temperature[J]. Applied Physics Letters,2009,94(1).
APA	Yang, Xiaoxia.,Wang, Chong.,Zhou, Conghua.,Fang, Guojia.,Zhou, Hai.,...&Huang, Huihui.(2009).Deep ultraviolet and near infrared photodiode based on n-ZnO/p -silicon nanowire heterojunction fabricated at low temperature.Applied Physics Letters,94(1).
MLA	Yang, Xiaoxia,et al."Deep ultraviolet and near infrared photodiode based on n-ZnO/p -silicon nanowire heterojunction fabricated at low temperature".Applied Physics Letters 94.1(2009).

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