Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning | |
Yan, Xiaobing; Zhang, Lei; Chen, Huawei; Li, Xiaoyan; Wang, Jingjuan; Liu, Qi; Lu, Chao; Chen, Jingsheng; Wu, Huaqiang; Zhou, Peng | |
刊名 | ADVANCED FUNCTIONAL MATERIALS |
2018 | |
卷号 | 28期号:40 |
关键词 | artificial synapses graphene quantum dots memristors |
ISSN号 | 1616-301X |
URL标识 | 查看原文 |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3600735 |
专题 | 复旦大学上海医学院 |
推荐引用方式 GB/T 7714 | Yan, Xiaobing,Zhang, Lei,Chen, Huawei,et al. Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(40). |
APA | Yan, Xiaobing.,Zhang, Lei.,Chen, Huawei.,Li, Xiaoyan.,Wang, Jingjuan.,...&Zhou, Peng.(2018).Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning.ADVANCED FUNCTIONAL MATERIALS,28(40). |
MLA | Yan, Xiaobing,et al."Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning".ADVANCED FUNCTIONAL MATERIALS 28.40(2018). |
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