Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model

	Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model
	Wang M ; Gu YX ; Ji HM ; Yang T ; Wang ZG
刊名	chinese physics b
	2011
卷号	20 期号:7 页码:77301
关键词	EPITAXY MOVPE
ISSN号	1009-1963
通讯作者	yang, t (reprint author), chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china, tyang@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	chinese academy of sciences, china
语种	英语
公开日期	2012-02-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22789]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wang M,Gu YX,Ji HM,et al. Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model[J]. chinese physics b,2011,20(7):77301.
APA	Wang M,Gu YX,Ji HM,Yang T,&Wang ZG.(2011).Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model.chinese physics b,20(7),77301.
MLA	Wang M,et al."Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model".chinese physics b 20.7(2011):77301.