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	Effect of oxygen flow rate on electrical and optical properties of ATO thin films prepared by rf magnetron sputtering
	Yang, P.*; Jiang, L.R.; Wu, J.Y.; Chen, F.; Perez, J.A. Galaviz; Shen, Q.; Schoenung, J.M.; Zhang, L.M.
	2014
会议名称	5th International Symposium on Advance Ceramics (ISAC) / 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials (ASPT)
会议日期	DEC 09-12, 2013
会议地点	Wuhan, PEOPLES R CHINA
关键词	Antimony doped tin oxide magnetron sputtering electrical property optical property
卷号	616
DOI	10.4028/www.scientific.net/KEM.616.178
页码	178-182
会议录	ADVANCED CERAMICS AND NOVEL PROCESSING
URL标识	查看原文
ISSN号	1013-9826
WOS记录号	WOS:000347883400031;EI:20142917942053
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/3405765
专题	武汉理工大学
作者单位	1.[Jiang, L.R. 2.Chen, F. 3.Perez, J.A. Galaviz 4.Yang, P. 5.Shen, Q. 6.Zhang, L.M. 7.Wu, J.Y.] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China.
推荐引用方式 GB/T 7714	Yang, P.*,Jiang, L.R.,Wu, J.Y.,et al. Effect of oxygen flow rate on electrical and optical properties of ATO thin films prepared by rf magnetron sputtering[C]. 见:5th International Symposium on Advance Ceramics (ISAC) / 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials (ASPT). Wuhan, PEOPLES R CHINA. DEC 09-12, 2013.

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