Determining the spatial profiles of electron and hole concentration, radiative and non-radiative recombination rate near a dislocation defect by combining Raman and photoluminescence imaging | |
Hu, Changkui; Chen, Qiong; Chen, Fengxiang; Lv, Heng; Gfroerer, T. H.; Wanlass, M. W.; Zhang, Yong* | |
2018 | |
会议名称 | 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC |
会议日期 | JUN 10-15, 2018 |
会议地点 | Waikoloa, HI |
页码 | 3261-3264 |
会议录 | 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)
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URL标识 | 查看原文 |
ISSN号 | 2159-2330 |
WOS记录号 | WOS:000469200403070 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3390913 |
专题 | 武汉理工大学 |
作者单位 | 1.[Chen, Qiong 2.Chen, Fengxiang 3.Hu, Changkui 4.Zhang, Yong] Univ N Carolina, Charlotte, NC 28223 USA. |
推荐引用方式 GB/T 7714 | Hu, Changkui,Chen, Qiong,Chen, Fengxiang,et al. Determining the spatial profiles of electron and hole concentration, radiative and non-radiative recombination rate near a dislocation defect by combining Raman and photoluminescence imaging[C]. 见:7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC. Waikoloa, HI. JUN 10-15, 2018. |
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