| Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric | |
| Zou, Jiyue; Wang, Lisheng*; Chen, Fengxiang* | |
| 刊名 | AIP ADVANCES
 |
| 2019 | |
| 卷号 | 9期号:9 |
| ISSN号 | 2158-3226 |
| DOI | 10.1063/1.5119913 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000488516200081 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/3390733 |
| 专题 | 武汉理工大学 |
| 作者单位 | [Zou, Jiyue] Wuhan Univ Technol, Sch Informat Engn, Wuhan 430070, Hubei, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zou, Jiyue,Wang, Lisheng*,Chen, Fengxiang*. Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric[J]. AIP ADVANCES,2019,9(9). |
| APA | Zou, Jiyue,Wang, Lisheng*,&Chen, Fengxiang*.(2019).Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric.AIP ADVANCES,9(9). |
| MLA | Zou, Jiyue,et al."Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric".AIP ADVANCES 9.9(2019). |
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