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	Enhanced photoelectric performance of CdSe by graphene quantum dot modification
	Lei, Yun*; Ouyang, Zhong; Zhang, Zheng; Jiang, Zicong
刊名	Materials Research Express
	2019
卷号	6期号:1页码:015906
关键词	CdSe/GQDs composites GQDs content photoelectric performance
ISSN号	2053-1591
DOI	10.1088/2053-1591/aae866
URL标识	查看原文
WOS记录号	WOS:000448879400001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3389452
专题	武汉理工大学
作者单位	1.[Ouyang, Zhong 2.Jiang, Zicong 3.Zhang, Zheng 4.Lei, Yun] Wuhan Univ Technol, Sch Resources & Environm Engn, Luoshi Rd 122, Wuhan 430070, Hubei, Peoples R China.
推荐引用方式 GB/T 7714	Lei, Yun*,Ouyang, Zhong,Zhang, Zheng,et al. Enhanced photoelectric performance of CdSe by graphene quantum dot modification[J]. Materials Research Express,2019,6(1):015906.
APA	Lei, Yun*,Ouyang, Zhong,Zhang, Zheng,&Jiang, Zicong.(2019).Enhanced photoelectric performance of CdSe by graphene quantum dot modification.Materials Research Express,6(1),015906.
MLA	Lei, Yun*,et al."Enhanced photoelectric performance of CdSe by graphene quantum dot modification".Materials Research Express 6.1(2019):015906.

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