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Synthesis and Characterization of High-Purity Tellurium Nanowires via Self-seed-Assisted Growth Approach
Li, Ying; Zhao, Wen-yu; Mu, Xin; Liu, Xing; He, Dan-qi; Zhu, Wan-ting; Zhang, Qing-jie(张清杰)
刊名Journal of Electronic Materials
2016
卷号45期号:3页码:1661-1668
关键词Tellurium nanowires self-seed-assisted growth optimization structural characterization
ISSN号0361-5235
DOI10.1007/s11664-015-4154-1
URL标识查看原文
WOS记录号WOS:000371163400065;EI:20154401489510
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3386977
专题武汉理工大学
作者单位1.[Zhang, Qing-jie
2.He, Dan-qi
3.Liu, Xing
4.Li, Ying
5.Mu, Xin
6.Zhao, Wen-yu
7.Zhu, Wan-ting
8.Zhao, WY] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China.
推荐引用方式
GB/T 7714
Li, Ying,Zhao, Wen-yu,Mu, Xin,et al. Synthesis and Characterization of High-Purity Tellurium Nanowires via Self-seed-Assisted Growth Approach[J]. Journal of Electronic Materials,2016,45(3):1661-1668.
APA Li, Ying.,Zhao, Wen-yu.,Mu, Xin.,Liu, Xing.,He, Dan-qi.,...&Zhang, Qing-jie.(2016).Synthesis and Characterization of High-Purity Tellurium Nanowires via Self-seed-Assisted Growth Approach.Journal of Electronic Materials,45(3),1661-1668.
MLA Li, Ying,et al."Synthesis and Characterization of High-Purity Tellurium Nanowires via Self-seed-Assisted Growth Approach".Journal of Electronic Materials 45.3(2016):1661-1668.
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