Uniformity investigation of MOCVD‐grown LED layers page 30–40 Haisheng Fang et al. | |
Jiang, Zhimin; Yan, Han; Liu, Sheng; Zhang, Zhi; Gan, Zhiyin*; Fang, Haisheng | |
刊名 | Crystal Research and Technology
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2016 | |
卷号 | 51期号:1页码:30-40 |
关键词 | Gallium nitride Growth uniformity Metal‐organic chemical vapor deposition Light‐emitting diodes |
ISSN号 | 1521-4079 |
DOI | 10.1002/crat.201500135 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000368703100005;EI:20153201119270 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3385920 |
专题 | 武汉理工大学 |
作者单位 | 1.[Jiang, Zhimin 2.Fang, Haisheng 3.Zhang, Zhi] Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Hubei, Peoples R China. |
推荐引用方式 GB/T 7714 | Jiang, Zhimin,Yan, Han,Liu, Sheng,et al. Uniformity investigation of MOCVD‐grown LED layers page 30–40 Haisheng Fang et al.[J]. Crystal Research and Technology,2016,51(1):30-40. |
APA | Jiang, Zhimin,Yan, Han,Liu, Sheng,Zhang, Zhi,Gan, Zhiyin*,&Fang, Haisheng.(2016).Uniformity investigation of MOCVD‐grown LED layers page 30–40 Haisheng Fang et al..Crystal Research and Technology,51(1),30-40. |
MLA | Jiang, Zhimin,et al."Uniformity investigation of MOCVD‐grown LED layers page 30–40 Haisheng Fang et al.".Crystal Research and Technology 51.1(2016):30-40. |
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