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	Uniformity investigation of MOCVD‐grown LED layers page 30–40 Haisheng Fang et al.
	Jiang, Zhimin; Yan, Han; Liu, Sheng; Zhang, Zhi; Gan, Zhiyin*; Fang, Haisheng
刊名	Crystal Research and Technology
	2016
卷号	51期号:1页码:30-40
关键词	Gallium nitride Growth uniformity Metal‐organic chemical vapor deposition Light‐emitting diodes
ISSN号	1521-4079
DOI	10.1002/crat.201500135
URL标识	查看原文
WOS记录号	WOS:000368703100005;EI:20153201119270
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3385920
专题	武汉理工大学
作者单位	1.[Jiang, Zhimin 2.Fang, Haisheng 3.Zhang, Zhi] Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Hubei, Peoples R China.
推荐引用方式 GB/T 7714	Jiang, Zhimin,Yan, Han,Liu, Sheng,et al. Uniformity investigation of MOCVD‐grown LED layers page 30–40 Haisheng Fang et al.[J]. Crystal Research and Technology,2016,51(1):30-40.
APA	Jiang, Zhimin,Yan, Han,Liu, Sheng,Zhang, Zhi,Gan, Zhiyin*,&Fang, Haisheng.(2016).Uniformity investigation of MOCVD‐grown LED layers page 30–40 Haisheng Fang et al..Crystal Research and Technology,51(1),30-40.
MLA	Jiang, Zhimin,et al."Uniformity investigation of MOCVD‐grown LED layers page 30–40 Haisheng Fang et al.".Crystal Research and Technology 51.1(2016):30-40.

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