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Improved Electrical Properties of Low-Temperature Sintered Cu Doped Ba0.99Ca0.01Zr0.02Ti0.98O3 Ceramics
Zhang, Yong; Sun, Huajun; Chen, Wen*
刊名Journal of Electronic Materials
2016
卷号45期号:10页码:5006-5016
关键词BCZT doping electrical properties lead-free ceramics sintering temperature
ISSN号0361-5235
DOI10.1007/s11664-016-4672-5
URL标识查看原文
WOS记录号WOS:000382585400041;EI:20162702549056
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3384574
专题武汉理工大学
作者单位1.[Chen, Wen
2.Sun, Huajun
3.Zhang, Yong] Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China.
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GB/T 7714
Zhang, Yong,Sun, Huajun,Chen, Wen*. Improved Electrical Properties of Low-Temperature Sintered Cu Doped Ba0.99Ca0.01Zr0.02Ti0.98O3 Ceramics[J]. Journal of Electronic Materials,2016,45(10):5006-5016.
APA Zhang, Yong,Sun, Huajun,&Chen, Wen*.(2016).Improved Electrical Properties of Low-Temperature Sintered Cu Doped Ba0.99Ca0.01Zr0.02Ti0.98O3 Ceramics.Journal of Electronic Materials,45(10),5006-5016.
MLA Zhang, Yong,et al."Improved Electrical Properties of Low-Temperature Sintered Cu Doped Ba0.99Ca0.01Zr0.02Ti0.98O3 Ceramics".Journal of Electronic Materials 45.10(2016):5006-5016.
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