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	Enhanced Responsivity of GaN Metal-Semiconductor-Metal (MSM) Photodetectors on GaN Substrate
	Chang, Siyi; Chang, Mengting; Yang, Yingping*
刊名	IEEE Photonics Journal
	2017
卷号	9期号:2页码:1-7
关键词	GaN ultraviolet photodetectors (UV PDs) Al nanodot localized surface plasmon
ISSN号	1943-0655
DOI	10.1109/JPHOT.2017.2688520
URL标识	查看原文
WOS记录号	WOS:000399677900001;EI:20171903638789
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3383829
专题	武汉理工大学
作者单位	1.[Yang, Yingping 2.Chang, Siyi] Wuhan Univ Technol, Sch Sci, Wuhan 430070, Peoples R China.
推荐引用方式 GB/T 7714	Chang, Siyi,Chang, Mengting,Yang, Yingping*. Enhanced Responsivity of GaN Metal-Semiconductor-Metal (MSM) Photodetectors on GaN Substrate[J]. IEEE Photonics Journal,2017,9(2):1-7.
APA	Chang, Siyi,Chang, Mengting,&Yang, Yingping*.(2017).Enhanced Responsivity of GaN Metal-Semiconductor-Metal (MSM) Photodetectors on GaN Substrate.IEEE Photonics Journal,9(2),1-7.
MLA	Chang, Siyi,et al."Enhanced Responsivity of GaN Metal-Semiconductor-Metal (MSM) Photodetectors on GaN Substrate".IEEE Photonics Journal 9.2(2017):1-7.

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