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	A Novel Read-Out Electronics Design Based on 1-Bit Sigma-Delta Modulation
	Zhao, Zhixiang; Huang, Qiu*; Gong, Zheng; Su, Zhihong; Moses, William W.; Xu, Jianfeng*; Peng, Qiyu*
刊名	IEEE Transactions on Nuclear Science
	2017
卷号	64期号:2页码:820-828
关键词	Dark current electronics energy PET
ISSN号	0018-9499
DOI	10.1109/TNS.2017.2648787
URL标识	查看原文
WOS记录号	WOS:000396813400008;EI:20171303512917
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3380479
专题	武汉理工大学
作者单位	1.[Huang, Qiu 2.Zhao, Zhixiang] Shanghai Jiao Tong Univ, Shanghai 200240, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, Zhixiang,Huang, Qiu*,Gong, Zheng,et al. A Novel Read-Out Electronics Design Based on 1-Bit Sigma-Delta Modulation[J]. IEEE Transactions on Nuclear Science,2017,64(2):820-828.
APA	Zhao, Zhixiang.,Huang, Qiu*.,Gong, Zheng.,Su, Zhihong.,Moses, William W..,...&Peng, Qiyu*.(2017).A Novel Read-Out Electronics Design Based on 1-Bit Sigma-Delta Modulation.IEEE Transactions on Nuclear Science,64(2),820-828.
MLA	Zhao, Zhixiang,et al."A Novel Read-Out Electronics Design Based on 1-Bit Sigma-Delta Modulation".IEEE Transactions on Nuclear Science 64.2(2017):820-828.

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