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	A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes
	Lu, Yuanxi; Huang, Jian*; Li, Bing; Tang, Ke*; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun
刊名	Applied Surface Science
	2017
卷号	428页码:61-65
关键词	ZnO Heterojunction Magnetron sputtering UV
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2017.09.053
URL标识	查看原文
WOS记录号	WOS:000415227000007;EI:20173904210777
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3379979
专题	武汉理工大学
作者单位	1.[Tang, Ke 2.Ma, Yuncheng 3.Huang, Jian 4.Huang, J 5.Tang, K 6.Lu, Yuanxi 7.Wang, Lin 8.Cao, Meng 9.Wang, Linjun 10.Li, Bing] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Lu, Yuanxi,Huang, Jian*,Li, Bing,et al. A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes[J]. Applied Surface Science,2017,428:61-65.
APA	Lu, Yuanxi.,Huang, Jian*.,Li, Bing.,Tang, Ke*.,Ma, Yuncheng.,...&Wang, Linjun.(2017).A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes.Applied Surface Science,428,61-65.
MLA	Lu, Yuanxi,et al."A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes".Applied Surface Science 428(2017):61-65.

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