CORC  > 武汉理工大学
Synthesis and Characterization of High-Purity Bismuth Nanowires via Seed-Assisted Growth Approach
Mu, Xin; Zhao, Wen-Yu*; He, Dan-Qi; Zhou, Hong-Yu; Zhu, Wan-Ting; Zhang, Qing-Jie
刊名Journal of Electronic Materials
2015
卷号44期号:6页码:2048-2054
关键词Bismuth nanowires seed-assisted growth technique optimization structural characterization
ISSN号0361-5235
DOI10.1007/s11664-015-3654-3
会议名称International Conference on Thermoelectrics (ICT)
URL标识查看原文
会议地点Nashville, TN
会议日期JUL 06-10, 2014
WOS记录号WOS:000353813700097;EI:20150700533588
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3370538
专题武汉理工大学
作者单位1.[He, Dan-Qi
2.Mu, Xin
3.Zhao, Wen-Yu
4.Zhang, Qing-Jie
5.Zhou, Hong-Yu
6.Zhu, Wan-Ting] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China.
推荐引用方式
GB/T 7714
Mu, Xin,Zhao, Wen-Yu*,He, Dan-Qi,et al. Synthesis and Characterization of High-Purity Bismuth Nanowires via Seed-Assisted Growth Approach[J]. Journal of Electronic Materials,2015,44(6):2048-2054.
APA Mu, Xin,Zhao, Wen-Yu*,He, Dan-Qi,Zhou, Hong-Yu,Zhu, Wan-Ting,&Zhang, Qing-Jie.(2015).Synthesis and Characterization of High-Purity Bismuth Nanowires via Seed-Assisted Growth Approach.Journal of Electronic Materials,44(6),2048-2054.
MLA Mu, Xin,et al."Synthesis and Characterization of High-Purity Bismuth Nanowires via Seed-Assisted Growth Approach".Journal of Electronic Materials 44.6(2015):2048-2054.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace