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	Optimized thermoelectric properties of Sb-doped Mg2(1+ z)Si 0.5- ySn0.5Sby through adjustment of the Mg content
	Liu, Wei; Tang, Xinfeng*（唐新峰）; Li, Han; Sharp, Jeff; Zhou, Xiaoyuan; Uher, Ctirad
刊名	Chemistry of Materials
	2011
卷号	23期号:23页码:5256-5263
关键词	Mg2(1+z)Si0.5-ySn0.5Sby adjustment of the Mg content point defects thermoelectric properties
ISSN号	0897-4756
DOI	10.1021/cm202445d
URL标识	查看原文
WOS记录号	WOS:000297598700020;EI:20115014593955
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3365434
专题	武汉理工大学
作者单位	1.[Tang, Xinfeng 2.Liu, Wei 3.Li, Han] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Wei,Tang, Xinfeng*,Li, Han,et al. Optimized thermoelectric properties of Sb-doped Mg2(1+ z)Si 0.5- ySn0.5Sby through adjustment of the Mg content[J]. Chemistry of Materials,2011,23(23):5256-5263.
APA	Liu, Wei,Tang, Xinfeng*,Li, Han,Sharp, Jeff,Zhou, Xiaoyuan,&Uher, Ctirad.(2011).Optimized thermoelectric properties of Sb-doped Mg2(1+ z)Si 0.5- ySn0.5Sby through adjustment of the Mg content.Chemistry of Materials,23(23),5256-5263.
MLA	Liu, Wei,et al."Optimized thermoelectric properties of Sb-doped Mg2(1+ z)Si 0.5- ySn0.5Sby through adjustment of the Mg content".Chemistry of Materials 23.23(2011):5256-5263.

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