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	Graphene-Sb2Se3 thin films photoelectrode synthesized by in situ electrodeposition
	Jiang, Liangxing; Chen, Jianyu; Wang, Ying; Sun, Kaile; Liu, Fangyang*; Lai, Yanqing
刊名	Materials Letters
	2018
卷号	224页码:109-112
关键词	Antimony selenide Graphene Electrodeposition Thin films Photoelectrochemical characterization
ISSN号	0167-577X
DOI	10.1016/j.matlet.2018.04.054
URL标识	查看原文
WOS记录号	WOS:000432756400028
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3337631
专题	中南大学
作者单位	1.[Chen, Jianyu 2.Wang, Ying 3.Liu, Fangyang 4.Jiang, Liangxing 5.Sun, Kaile 6.Lai, Yanqing] Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
推荐引用方式 GB/T 7714	Jiang, Liangxing,Chen, Jianyu,Wang, Ying,et al. Graphene-Sb2Se3 thin films photoelectrode synthesized by in situ electrodeposition[J]. Materials Letters,2018,224:109-112.
APA	Jiang, Liangxing,Chen, Jianyu,Wang, Ying,Sun, Kaile,Liu, Fangyang*,&Lai, Yanqing.(2018).Graphene-Sb2Se3 thin films photoelectrode synthesized by in situ electrodeposition.Materials Letters,224,109-112.
MLA	Jiang, Liangxing,et al."Graphene-Sb2Se3 thin films photoelectrode synthesized by in situ electrodeposition".Materials Letters 224(2018):109-112.

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