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Growth and optical properties of In_xGa_(1-x)P nanowires synthesized by selective-area epitaxy
Berg, Alexander*; Caroff, Philippe*; Shahid, Naeem; Lockrey, Mark N.; Yuan, Xiaoming; Borgstrom, Magnus T.; Tan, Hark Hoe; Jagadish, Chennupati
刊名Nano Research
2017
卷号10期号:2页码:672-682
关键词nanowire InGaP selective-area epitaxy cathodoluminescence energy-dispersive X-ray spectroscopy
ISSN号1998-0124
DOI10.1007/s12274-016-1325-1
URL标识查看原文
WOS记录号WOS:000394322300026;EI:20165003108446
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3337290
专题中南大学
作者单位1.[Borgstrom, Magnus T.
2.Berg, Alexander] Lund Univ, Solid State Phys & NanoLund, Box 118, SE-22100 Lund, Sweden.
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GB/T 7714
Berg, Alexander*,Caroff, Philippe*,Shahid, Naeem,et al. Growth and optical properties of In_xGa_(1-x)P nanowires synthesized by selective-area epitaxy[J]. Nano Research,2017,10(2):672-682.
APA Berg, Alexander*.,Caroff, Philippe*.,Shahid, Naeem.,Lockrey, Mark N..,Yuan, Xiaoming.,...&Jagadish, Chennupati.(2017).Growth and optical properties of In_xGa_(1-x)P nanowires synthesized by selective-area epitaxy.Nano Research,10(2),672-682.
MLA Berg, Alexander*,et al."Growth and optical properties of In_xGa_(1-x)P nanowires synthesized by selective-area epitaxy".Nano Research 10.2(2017):672-682.
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