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Photoelectrochemical properties of Bi2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method
Wang, Ying; Chen, Jiangyu; Jiang, Liangxing*; Sun, Kaile; Liu, Fangyang; Lai, Yanqing
刊名Journal of Alloys and Compounds
2016
卷号686页码:684-692
关键词Bi2S3 TFs Photocurrent density Photoelectrochemical applications
ISSN号0925-8388
DOI10.1016/j.jallcom.2016.06.065
URL标识查看原文
WOS记录号WOS:000382228300088;EI:20162602532801
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3334158
专题中南大学
作者单位1.[Wang, Ying
2.Chen, Jiangyu
3.Liu, Fangyang
4.Jiang, Liangxing
5.Sun, Kaile
6.Lai, Yanqing] Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China.
推荐引用方式
GB/T 7714
Wang, Ying,Chen, Jiangyu,Jiang, Liangxing*,et al. Photoelectrochemical properties of Bi2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method[J]. Journal of Alloys and Compounds,2016,686:684-692.
APA Wang, Ying,Chen, Jiangyu,Jiang, Liangxing*,Sun, Kaile,Liu, Fangyang,&Lai, Yanqing.(2016).Photoelectrochemical properties of Bi2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method.Journal of Alloys and Compounds,686,684-692.
MLA Wang, Ying,et al."Photoelectrochemical properties of Bi2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method".Journal of Alloys and Compounds 686(2016):684-692.
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