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	Ion-gel gated field-effect transistors with solution-processed oxide semiconductors for bioinspired artificial synapses
	Kong, Ling-an; Sun, Jia*; Qian, Chuan; Gou, Guangyang; He, Yinke; Yang, Junliang; Gao, Yongli
刊名	Organic Electronics
	2016
卷号	39页码:64-70
关键词	Ion-gel Amorphous indium-zinc-oxide Field-effect transistors Artificial synapse
ISSN号	1566-1199
DOI	10.1016/j.orgel.2016.09.029
URL标识	查看原文
WOS记录号	WOS:000389087400009;EI:20164002873885
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3323886
专题	中南大学
作者单位	1.[Yang, Junliang 2.Gao, Yongli 3.Kong, Ling-an 4.Gou, Guangyang 5.Sun, Jia 6.Qian, Chuan 7.He, Yinke] Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China.
推荐引用方式 GB/T 7714	Kong, Ling-an,Sun, Jia*,Qian, Chuan,et al. Ion-gel gated field-effect transistors with solution-processed oxide semiconductors for bioinspired artificial synapses[J]. Organic Electronics,2016,39:64-70.
APA	Kong, Ling-an.,Sun, Jia*.,Qian, Chuan.,Gou, Guangyang.,He, Yinke.,...&Gao, Yongli.(2016).Ion-gel gated field-effect transistors with solution-processed oxide semiconductors for bioinspired artificial synapses.Organic Electronics,39,64-70.
MLA	Kong, Ling-an,et al."Ion-gel gated field-effect transistors with solution-processed oxide semiconductors for bioinspired artificial synapses".Organic Electronics 39(2016):64-70.

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