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	Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy
	Chen, Kun[1,2]; Wan, Xi[1,2]; Wen, Jinxiu[3,4]; Xie, Weiguang[5]; Kang, Zhiwen[1,2]; Zeng, Xiaoliang[6]; Chen, Huanjun[3,4]; Xu, Jian-Bin[1,2]
	2015
卷号	9期号:[db:dc_citation_issue]页码:9868
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3323651
专题	暨南大学
作者单位	1.[1]Chinese Univ Hong Kong, Dept Elect Engn & Mat Sci, Hong Kong, Hong Kong, Peoples R China 2.[2]Chinese Univ Hong Kong, Technol Res Ctr, Hong Kong, Hong Kong, Peoples R China 3.[3]Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China 4.[4]Sun Yat Sen Univ, Sch Phys & Engn, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China 5.[5]Jinan Univ, Dept Phys, Siyuan Lab, Guangzhou 510632, Guangdong, Peoples R China 6.[6]Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Chen, Kun[1,2],Wan, Xi[1,2],Wen, Jinxiu[3,4],et al. Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy[J],2015,9([db:dc_citation_issue]):9868.
APA	Chen, Kun[1,2].,Wan, Xi[1,2].,Wen, Jinxiu[3,4].,Xie, Weiguang[5].,Kang, Zhiwen[1,2].,...&Xu, Jian-Bin[1,2].(2015).Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy.,9([db:dc_citation_issue]),9868.
MLA	Chen, Kun[1,2],et al."Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy".9.[db:dc_citation_issue](2015):9868.

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