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Stress-induced atom diffusion at thermosonic flip chip bonding interface
Wang, Fuliang*; Han, Lei; Zhong, Jue
刊名Sensors and Actuators, A: Physical
2009
卷号149期号:1页码:100-105
关键词Thermosonic flip chip bonding Stress distribution Dislocation multiplication and propagation Atom diffusion Driving force FE model
ISSN号0924-4247
DOI10.1016/j.sna.2008.11.006
URL标识查看原文
WOS记录号WOS:000263253200015;EI:20090211855100
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3323140
专题中南大学
作者单位1.[Zhong, Jue
2.Han, Lei
3.Wang, Fuliang] Cent S Univ, Sch Mech & Elect Engn, Changsha 410083, Hn Province, Peoples R China.
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GB/T 7714
Wang, Fuliang*,Han, Lei,Zhong, Jue. Stress-induced atom diffusion at thermosonic flip chip bonding interface[J]. Sensors and Actuators, A: Physical,2009,149(1):100-105.
APA Wang, Fuliang*,Han, Lei,&Zhong, Jue.(2009).Stress-induced atom diffusion at thermosonic flip chip bonding interface.Sensors and Actuators, A: Physical,149(1),100-105.
MLA Wang, Fuliang*,et al."Stress-induced atom diffusion at thermosonic flip chip bonding interface".Sensors and Actuators, A: Physical 149.1(2009):100-105.
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