| Paper no P38: Electrical and optical stabilities of amorphous InGaZnO thin films for flexible sensing transistors | |
| Li, Yuanjie; Jiang, Kai; Fu, Yanhua; Liu, Zilong | |
| 2013 | |
| 关键词 | Amorphous oxide semiconductor (AOS) Annealing temperatures Electrical conduction Electrical conductivity Electron concentration rf-Magnetron sputtering Temperature dependent Variable range hopping |
| 卷号 | 44 |
| 期号 | [db:dc_citation_issue] |
| DOI | [db:dc_identifier_doi] |
| 页码 | 130-134 |
| 会议录 | Digest of Technical Papers - SID International Symposium
 |
| URL标识 | 查看原文 |
| ISSN号 | 0097-966X |
| WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/3311711 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Li, Yuanjie,Jiang, Kai,Fu, Yanhua,et al. Paper no P38: Electrical and optical stabilities of amorphous InGaZnO thin films for flexible sensing transistors[C]. 见:. |
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