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	Growth of GaN crystals by Na flux method under 7 MPa nitrogen pressure
	Zhou, Ming-Bin; Li, Zhen-Rong; Fan, Shi-Ji; Xu, Zhuo
刊名	Rengong Jingti Xuebao/Journal of Synthetic Crystals
	2013
卷号	42期号:[db:dc_citation_issue]页码:203-207+225
关键词	Crystalline quality GaN crystals Na flux methods Optical microscopes Photoluminescence spectrum Room temperature photoluminescence spectrums Scanning Electron Microscope X ray rocking curve
ISSN号	1000-985X
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3307618
专题	西安交通大学
推荐引用方式 GB/T 7714	Zhou, Ming-Bin,Li, Zhen-Rong,Fan, Shi-Ji,et al. Growth of GaN crystals by Na flux method under 7 MPa nitrogen pressure[J]. Rengong Jingti Xuebao/Journal of Synthetic Crystals,2013,42([db:dc_citation_issue]):203-207+225.
APA	Zhou, Ming-Bin,Li, Zhen-Rong,Fan, Shi-Ji,&Xu, Zhuo.(2013).Growth of GaN crystals by Na flux method under 7 MPa nitrogen pressure.Rengong Jingti Xuebao/Journal of Synthetic Crystals,42([db:dc_citation_issue]),203-207+225.
MLA	Zhou, Ming-Bin,et al."Growth of GaN crystals by Na flux method under 7 MPa nitrogen pressure".Rengong Jingti Xuebao/Journal of Synthetic Crystals 42.[db:dc_citation_issue](2013):203-207+225.

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