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	Growth of GaN Crystals by the Na Flux Method Under a Temperature Gradient
	Zhou, Mingbin; Li, Zhenrong; Li, Jingsi; Fan, Shiji; Xu, Zhuo
刊名	JOURNAL OF ELECTRONIC MATERIALS
	2014
卷号	43期号:[db:dc_citation_issue]页码:1219-1225
关键词	crystal growth Na flux method temperature gradient high temperature solution GaN crystal
ISSN号	0361-5235
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3298876
专题	西安交通大学
推荐引用方式 GB/T 7714	Zhou, Mingbin,Li, Zhenrong,Li, Jingsi,et al. Growth of GaN Crystals by the Na Flux Method Under a Temperature Gradient[J]. JOURNAL OF ELECTRONIC MATERIALS,2014,43([db:dc_citation_issue]):1219-1225.
APA	Zhou, Mingbin,Li, Zhenrong,Li, Jingsi,Fan, Shiji,&Xu, Zhuo.(2014).Growth of GaN Crystals by the Na Flux Method Under a Temperature Gradient.JOURNAL OF ELECTRONIC MATERIALS,43([db:dc_citation_issue]),1219-1225.
MLA	Zhou, Mingbin,et al."Growth of GaN Crystals by the Na Flux Method Under a Temperature Gradient".JOURNAL OF ELECTRONIC MATERIALS 43.[db:dc_citation_issue](2014):1219-1225.

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