Improvement of electrical-resistivity model for polycrystalline films of metals with nonspherical Fermi surface: A case for Os films | |
Zhang QY(张庆瑜); Ma CY(马春雨); Pan LJ(潘路军) | |
刊名 | J. Appl. Phys. 121, 134503 (2017) |
2017 | |
卷号 | 121页码:134503-134503 |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3296498 |
专题 | 大连理工大学 |
推荐引用方式 GB/T 7714 | Zhang QY,Ma CY,Pan LJ. Improvement of electrical-resistivity model for polycrystalline films of metals with nonspherical Fermi surface: A case for Os films[J]. J. Appl. Phys. 121, 134503 (2017),2017,121:134503-134503. |
APA | Zhang QY,Ma CY,&Pan LJ.(2017).Improvement of electrical-resistivity model for polycrystalline films of metals with nonspherical Fermi surface: A case for Os films.J. Appl. Phys. 121, 134503 (2017),121,134503-134503. |
MLA | Zhang QY,et al."Improvement of electrical-resistivity model for polycrystalline films of metals with nonspherical Fermi surface: A case for Os films".J. Appl. Phys. 121, 134503 (2017) 121(2017):134503-134503. |
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