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	Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT
	Qu, Shenqi; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Yin, Haibo; Yan, Junda; Peng, Enchao
刊名	EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
	2014
卷号	68期号:[db:dc_citation_issue]
ISSN号	1286-0042
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3289820
专题	西安交通大学
推荐引用方式 GB/T 7714	Qu, Shenqi,Wang, Xiaoliang,Xiao, Hongling,et al. Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2014,68([db:dc_citation_issue]).
APA	Qu, Shenqi.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Jiang, Lijuan.,...&Hou, Xun.(2014).Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,68([db:dc_citation_issue]).
MLA	Qu, Shenqi,et al."Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 68.[db:dc_citation_issue](2014).

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