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	Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies
	Li, Pengting; Ren, Shiqiang; Jiang, Dachuan; Wang, Kai; Li, Jiayan; Tan, Yi
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2017
卷号	67页码:1-7
关键词	Directional solidification Grain morphology Interstitial impurity Substitutional impurity
ISSN号	1369-8001
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3285071
专题	大连理工大学
作者单位	Dalian Univ Technol, Sch Mat Sci & Engn, 2 Linggong Rd, Dalian 116023, Peoples R China.,Key Lab Solar Energy Photovolta Syst Liaoning Pro, Dalian 116023, Peoples R China.
推荐引用方式 GB/T 7714	Li, Pengting,Ren, Shiqiang,Jiang, Dachuan,et al. Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,67:1-7.
APA	Li, Pengting,Ren, Shiqiang,Jiang, Dachuan,Wang, Kai,Li, Jiayan,&Tan, Yi.(2017).Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,67,1-7.
MLA	Li, Pengting,et al."Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 67(2017):1-7.

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