Novel plugged p(+) collector structure for high-performance IGBT

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	Novel plugged p(+) collector structure for high-performance IGBT
	Zhang,F ; Shi,LN ; Li,CF ; Wang,W ; Yu,W ; Sun,XW
刊名	IEEE TRANSACTIONS ON PLASMA SCIENCE
	2006
卷号	34 期号:3 页码:1026-1032
关键词	GATE BIPOLAR-TRANSISTOR ELECTRON-IRRADIATION PLATINUM LIFETIME PROTON GOLD
ISSN号	0093-3813
通讯作者	Zhang, F, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Physics ; Fluids & Plasmas
收录类别	SCI
公开日期	2011-12-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/39039]
专题	上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式 GB/T 7714	Zhang,F,Shi,LN,Li,CF,et al. Novel plugged p(+) collector structure for high-performance IGBT[J]. IEEE TRANSACTIONS ON PLASMA SCIENCE,2006,34(3):1026-1032.
APA	Zhang,F,Shi,LN,Li,CF,Wang,W,Yu,W,&Sun,XW.(2006).Novel plugged p(+) collector structure for high-performance IGBT.IEEE TRANSACTIONS ON PLASMA SCIENCE,34(3),1026-1032.
MLA	Zhang,F,et al."Novel plugged p(+) collector structure for high-performance IGBT".IEEE TRANSACTIONS ON PLASMA SCIENCE 34.3(2006):1026-1032.