Performance degradation of some on-chip finite-ground coplanar waveguide (FGCPW)-built passive devices at high temperature

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	Performance degradation of some on-chip finite-ground coplanar waveguide (FGCPW)-built passive devices at high temperature
	Yin,WY ; Mao,JF ; Shi,JL ; Sun,XW
刊名	MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
	2006
卷号	48 期号:9 页码:1754-1759
关键词	COMPLEX PERMITTIVITY GAAS-MESFETS DEPENDENCE INDUCTORS MODEL
ISSN号	0895-2477
通讯作者	Yin, WY, Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Ctr Microwave & RF Technol, Shanghai 200240, Peoples R China
学科主题	Engineering ; Electrical & Electronic; Optics
收录类别	SCI
公开日期	2011-12-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/39027]
专题	上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式 GB/T 7714	Yin,WY,Mao,JF,Shi,JL,et al. Performance degradation of some on-chip finite-ground coplanar waveguide (FGCPW)-built passive devices at high temperature[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,2006,48(9):1754-1759.
APA	Yin,WY,Mao,JF,Shi,JL,&Sun,XW.(2006).Performance degradation of some on-chip finite-ground coplanar waveguide (FGCPW)-built passive devices at high temperature.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,48(9),1754-1759.
MLA	Yin,WY,et al."Performance degradation of some on-chip finite-ground coplanar waveguide (FGCPW)-built passive devices at high temperature".MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 48.9(2006):1754-1759.