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	Effect of sputtering power on properties of ZnO thin film transistors with Bi15Zn1.0Nb1.5O7 gate insulator
	Ye, Wei; Ren, Wei; Shi, Peng; Yang, Shuming; Jing, Weixuan; Jiang, Zhuangde; Wu, Xiaoqing
刊名	CERAMICS INTERNATIONAL
	2015
卷号	41期号:[db:dc_citation_issue]页码:S750-S757
关键词	BZN pyrochlore thin film RF magnetron sputtering ZnO-TFTs
ISSN号	0272-8842
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3269110
专题	西安交通大学
推荐引用方式 GB/T 7714	Ye, Wei,Ren, Wei,Shi, Peng,et al. Effect of sputtering power on properties of ZnO thin film transistors with Bi15Zn1.0Nb1.5O7 gate insulator[J]. CERAMICS INTERNATIONAL,2015,41([db:dc_citation_issue]):S750-S757.
APA	Ye, Wei.,Ren, Wei.,Shi, Peng.,Yang, Shuming.,Jing, Weixuan.,...&Wu, Xiaoqing.(2015).Effect of sputtering power on properties of ZnO thin film transistors with Bi15Zn1.0Nb1.5O7 gate insulator.CERAMICS INTERNATIONAL,41([db:dc_citation_issue]),S750-S757.
MLA	Ye, Wei,et al."Effect of sputtering power on properties of ZnO thin film transistors with Bi15Zn1.0Nb1.5O7 gate insulator".CERAMICS INTERNATIONAL 41.[db:dc_citation_issue](2015):S750-S757.

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