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	Effect of excess ZnO on structure and dielectric properties of Bi1.5Zn1.0Nb1.5O7 thin films grown at room temperature by RF magnetron sputtering
	Khan, M. Saeed; Ren, Wei; Wang, Zhao; Shi, Peng; Wu, Xiaoqing
刊名	CERAMICS INTERNATIONAL
	2015
卷号	41期号:[db:dc_citation_issue]页码:S283-S288
关键词	Films BZN Capacitors Dielectric properties
ISSN号	0272-8842
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3267052
专题	西安交通大学
推荐引用方式 GB/T 7714	Khan, M. Saeed,Ren, Wei,Wang, Zhao,et al. Effect of excess ZnO on structure and dielectric properties of Bi1.5Zn1.0Nb1.5O7 thin films grown at room temperature by RF magnetron sputtering[J]. CERAMICS INTERNATIONAL,2015,41([db:dc_citation_issue]):S283-S288.
APA	Khan, M. Saeed,Ren, Wei,Wang, Zhao,Shi, Peng,&Wu, Xiaoqing.(2015).Effect of excess ZnO on structure and dielectric properties of Bi1.5Zn1.0Nb1.5O7 thin films grown at room temperature by RF magnetron sputtering.CERAMICS INTERNATIONAL,41([db:dc_citation_issue]),S283-S288.
MLA	Khan, M. Saeed,et al."Effect of excess ZnO on structure and dielectric properties of Bi1.5Zn1.0Nb1.5O7 thin films grown at room temperature by RF magnetron sputtering".CERAMICS INTERNATIONAL 41.[db:dc_citation_issue](2015):S283-S288.

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